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A dual‐band divide‐by‐2 injection locked frequency divider in 0.35‐μm SiGe BiCMOS
Author(s) -
Jang ShengLyang,
Shih ChihChieh,
Chang ChiaWei,
Liu ChengChen,
Huang JhinFang
Publication year - 2010
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.25586
Subject(s) - frequency divider , varicap , heterojunction bipolar transistor , electrical engineering , resonator , microwave , optoelectronics , bicmos , engineering , multi band device , materials science , electronic engineering , voltage , physics , telecommunications , transistor , bipolar junction transistor , capacitance , power dividers and directional couplers , electrode , quantum mechanics , antenna (radio)
A fourth order resonator has been implemented to design an injection locked frequency divider (ILFD) implemented in a 0.35‐μm SiGe 3P3M BiCMOS process. The ILFD is realized with a cross‐coupled HBT LC‐tank oscillator with switched varactor bias for frequency band selection. The LC tank is a 4th order resonator and it can operate with two tunable frequency bands. Measurement results show that at the supply voltage of 1.25 V, the free‐running frequency can be from 3.22 (6.76) to 3.41 (7.53) GHz for the low‐(high‐) frequency band. The divide‐by‐2 operational locking range can be from 6.3 (12.8) to 6.95 (15.3) GHz for the low‐(high‐) frequency band. © 2010 Wiley Periodicals, Inc. Microwave Opt Technol Lett 52:2762–2765, 2010; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.25586