A 7‐ to 14‐GHz GaAs pHEMT LNA with 1.1 dB noise figure and 26 dB gain | Zendy

Peng YangYang | Zendy; Lu KeJie | Zendy; Sui WenQuan | Zendy

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A 7‐ to 14‐GHz GaAs pHEMT LNA with 1.1 dB noise figure and 26 dB gain

Author(s) -

Peng YangYang,

Lu KeJie,

Sui WenQuan

Publication year - 2010

Publication title -

microwave and optical technology letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.304

H-Index - 76

eISSN - 1098-2760

pISSN - 0895-2477

DOI - 10.1002/mop.25547

Subject(s) - noise figure , high electron mobility transistor , low noise amplifier , wideband , return loss , microwave , bandwidth (computing) , electrical engineering , amplifier , optoelectronics , monolithic microwave integrated circuit , noise (video) , engineering , electronic engineering , materials science , telecommunications , computer science , transistor , artificial intelligence , voltage , antenna (radio) , image (mathematics)

A three‐stage 7‐ to 14‐GHz monolithic low‐noise amplifier (LNA) has been fabricated using 0.15‐μm AlGaAs/GaAs pHEMT technology.To achieve ultra low noise figure and wide operation bandwidth, the proposed LNA uses wideband matching network and negative feedback technique. Measured results from 7 to 14 GHz demonstrate a minimum of 1.1 dB noise figure and 26 dB gain. The input and output return loss exceeded 10 dB across the band. These results demonstrate the best performance of AlGaAs/GaAs pHEMT technology for wideband and low noise applications. © 2010 Wiley Periodicals, Inc. Microwave Opt Technol Lett 52:2615–2617, 2010; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.25547

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