Premium
A W‐band monolithic down‐converter for MMW module based on metamorphic HEMTs
Author(s) -
Baek YongHyun,
Lee SangJin,
Baek TaeJong,
Mun SungWoon,
Ko DongSik,
Jeon ByoungChul,
Kim WanJoo,
Choi JaeHyun,
Lee NamJae,
Rhee JinKoo
Publication year - 2010
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.25546
Subject(s) - extremely high frequency , materials science , amplifier , w band , microwave , high electron mobility transistor , optoelectronics , v band , transistor , electrical engineering , q band , monolithic microwave integrated circuit , millimeter , engineering , physics , telecommunications , cmos , optics , voltage
Abstract In this article, we fabricated a 94 GHz monolithic down‐converter that consists of a two‐stage amplifier and a single‐balanced mixer using the 0.1‐μm metamorphic high electron mobility transistor (MHEMT) technology. The down‐converter of a 3.3 × 2.5 mm 2 chip size shows a low conversion loss of ∼2.8 dB at 94 GHz and excellent LO‐to‐RF isolation above 35 dB in a frequency of 90–98 GHz. Also, we fabricated the millimeter‐wave (MMW) module that exhibits a conversion loss of 7–8.5 dB from 93.66 to 94.365 GHz. © 2010 Wiley Periodicals, Inc. Microwave Opt Technol Lett 52:2618–2621, 2010; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.25546