A W‐band monolithic down‐converter for MMW module based on metamorphic HEMTs | Zendy

Baek YongHyun | Zendy; Lee SangJin | Zendy; Baek TaeJong | Zendy; Mun SungWoon | Zendy; Ko DongSik | Zendy; Jeon ByoungChul | Zendy; Kim WanJoo | Zendy; Choi JaeHyun | Zendy; Lee NamJae | Zendy; Rhee JinKoo | Zendy

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A W‐band monolithic down‐converter for MMW module based on metamorphic HEMTs

Author(s) -

Baek YongHyun,

Lee SangJin,

Baek TaeJong,

Mun SungWoon,

Ko DongSik,

Jeon ByoungChul,

Kim WanJoo,

Choi JaeHyun,

Lee NamJae,

Rhee JinKoo

Publication year - 2010

Publication title -

microwave and optical technology letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.304

H-Index - 76

eISSN - 1098-2760

pISSN - 0895-2477

DOI - 10.1002/mop.25546

Subject(s) - extremely high frequency , materials science , amplifier , w band , microwave , high electron mobility transistor , optoelectronics , v band , transistor , electrical engineering , q band , monolithic microwave integrated circuit , millimeter , engineering , physics , telecommunications , cmos , optics , voltage

In this article, we fabricated a 94 GHz monolithic down‐converter that consists of a two‐stage amplifier and a single‐balanced mixer using the 0.1‐μm metamorphic high electron mobility transistor (MHEMT) technology. The down‐converter of a 3.3 × 2.5 mm 2 chip size shows a low conversion loss of ∼2.8 dB at 94 GHz and excellent LO‐to‐RF isolation above 35 dB in a frequency of 90–98 GHz. Also, we fabricated the millimeter‐wave (MMW) module that exhibits a conversion loss of 7–8.5 dB from 93.66 to 94.365 GHz. © 2010 Wiley Periodicals, Inc. Microwave Opt Technol Lett 52:2618–2621, 2010; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.25546

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