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A 1‐kW switchable damped class‐E power amplifier for plasma processing applications
Author(s) -
Kim JiYeon,
Chun SangHyun,
Jang DongHee,
Kim JongHeon,
Kennedy Gray P.
Publication year - 2010
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.25512
Subject(s) - amplifier , direct coupled amplifier , power added efficiency , rf power amplifier , linear amplifier , electrical engineering , generator (circuit theory) , electronic engineering , operational transconductance amplifier , cascade amplifier , power (physics) , engineering , microwave , fet amplifier , differential amplifier , operational amplifier , materials science , physics , cmos , telecommunications , quantum mechanics
In this article, a new highly efficient and highly stable 1 kW power amplifier is designed and fabricated for plasma processing applications.The efficiency of the generator was improved by using a class‐E type power amplifier consisting of one push–pull MOSFET and a high‐current driver IC instead of a conventional class‐C amplifier composed of several single ended MOSFETs. A switchable damper allows a selection of one of three different amplifier modes; these modes adjust the amplifier's efficiency and stability. The amplifier dimensions were reduced by 30% compared with the conventional class‐C power amplifier. Also, a drain efficiency of 80% was produced for a generator output power of 1 kW and operating frequency of 13.56 MHz. © 2010 Wiley Periodicals, Inc. Microwave Opt Technol Lett 52:2438–2441, 2010; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.25512
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