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A 60‐GHz LNA with 18.6‐dB gain and 5.7‐dB NF in 90‐nm CMOS
Author(s) -
Kang Kai,
Brinkhoff James,
Lin Fujiang
Publication year - 2010
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.25379
Subject(s) - noise figure , cmos , low noise amplifier , electrical engineering , microwave , amplifier , electronic engineering , microstrip , engineering , optoelectronics , physics , telecommunications
A 60‐GHz low‐noise amplifier (LNA) is implemented in a commercial 90‐nm RF CMOS process. A scalable model based on electromagnetic simulation is adopted to model on‐chip microstrip transmission lines. First‐pass silicon success has been achieved by accurate modeling of passive and active devices and careful layout. The three‐stage LNA achieves 18.6‐dB gain, a noise figure of 5.7 dB, and an input P 1dB of −14.8 dBm. It consumes 24 mA from a 1.2‐V supply. The total LNA die area with pads is 1.4 × 0.5 mm 2 . © 2010 Wiley Periodicals, Inc. Microwave Opt Technol Lett 52: 2056–2059, 2010; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.25379