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On the noise measurements and modeling for on wafer HEMTs up to 26.5 GHz
Author(s) -
Caddemi Alina,
Crupi Giovanni
Publication year - 2010
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.25304
Subject(s) - wafer , microwave , noise (video) , electronic engineering , optoelectronics , noise figure , engineering , materials science , electrical engineering , computer science , telecommunications , cmos , amplifier , image (mathematics) , artificial intelligence
The present article details a technique for measuring and modeling the noise properties of on wafer active solid state devices. This technique is based on 50 Ω noise figure measurements up to 26.5 GHz. A good agreement between measurements and model simulations is obtained at such high frequency, thanks to the inclusion of the nonquasi‐static effect associated to the intrinsic feed‐back resistance. © 2010 Wiley Periodicals, Inc. Microwave Opt Technol Lett 52: 1799–1803, 2010; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.25304