On the noise measurements and modeling for on wafer HEMTs up to 26.5 GHz | Zendy

Caddemi Alina | Zendy; Crupi Giovanni | Zendy

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On the noise measurements and modeling for on wafer HEMTs up to 26.5 GHz

Author(s) -

Caddemi Alina,

Crupi Giovanni

Publication year - 2010

Publication title -

microwave and optical technology letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.304

H-Index - 76

eISSN - 1098-2760

pISSN - 0895-2477

DOI - 10.1002/mop.25304

Subject(s) - wafer , microwave , noise (video) , electronic engineering , optoelectronics , noise figure , engineering , materials science , electrical engineering , computer science , telecommunications , cmos , amplifier , image (mathematics) , artificial intelligence

The present article details a technique for measuring and modeling the noise properties of on wafer active solid state devices. This technique is based on 50 Ω noise figure measurements up to 26.5 GHz. A good agreement between measurements and model simulations is obtained at such high frequency, thanks to the inclusion of the nonquasi‐static effect associated to the intrinsic feed‐back resistance. © 2010 Wiley Periodicals, Inc. Microwave Opt Technol Lett 52: 1799–1803, 2010; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.25304

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