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Cascoded HBT pair: A new method of generating subnanosecond high‐voltage impulses
Author(s) -
Xia Jingjing,
Law Choi Look
Publication year - 2010
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.25295
Subject(s) - heterojunction bipolar transistor , pulse generator , electrical engineering , microwave , voltage , impulse (physics) , inductor , impulse generator , optoelectronics , generator (circuit theory) , engineering , physics , materials science , transistor , telecommunications , bipolar junction transistor , power (physics) , quantum mechanics
In this letter, a fully integrated subnanosecond high‐voltage impulse generator using 2‐μm GaAs HBT process is presented. The core circuit consists of a cascoded HBT pair with an inductor and it works on two principles: a faster transition can be obtained from a digital logic input into the HBT and a differentiation of the very fast transition current using the inductor to generate a large voltage at the output. Measurement results show the generated impulses have a tunable peak voltage between 0.5 and 3.2 V with a full‐width‐half‐maximum (FWHM) of 100 ps. The impulse generator is biased from a 3.3 V battery supply and consumes 15 mW at 1 MHz pulse repetition rate (PRF). © 2010 Wiley Periodicals, Inc. Microwave Opt Technol Lett 52: 1683–1685, 2010; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.25295
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