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Design of asymmetrical spurline filter for a high power sic MESFET class‐E power amplifier
Author(s) -
Wang Li,
Chen Wenhua,
Wang Peng,
Xue Xin,
Dong Jiaxing,
Feng Zhenghe
Publication year - 2010
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.25260
Subject(s) - mesfet , amplifier , microwave , electrical engineering , power (physics) , electronic engineering , filter (signal processing) , engineering , power added efficiency , rf power amplifier , physics , telecommunications , transistor , cmos , voltage , quantum mechanics , field effect transistor
An asymmetrical spurline filter (ASF) with dual‐bandgap characteristics is designed and applied as the load network of the class‐E power amplifier to improve the output power and efficiency. Meanwhile, an equivalent circuit model is built for the proposed ASF based on two LCR resonators. © 2010 Wiley Periodicals, Inc. Microwave Opt Technol Lett 52: 1650–1652, 2010; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.25260

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