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A 90 nm CMOS dual‐band divide‐by‐2 and ‐4 injection‐locked frequency divider
Author(s) -
Jang ShengLyang,
Wu YuanKai,
Chang ChiaWei,
Huang JhinFang,
Liu ChengChen
Publication year - 2010
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.25217
Subject(s) - frequency divider , electrical engineering , nmos logic , inductor , microwave , resonator , cmos , multi band device , engineering , electronic oscillator , frequency band , optoelectronics , materials science , voltage , physics , voltage controlled oscillator , transistor , telecommunications , antenna (radio)
A fourth‐order resonator has been implemented to design a 65 GHz injection‐locked frequency divider (ILFD) implemented in a 90 nm CMOS process.The ILFD is realized with a cross‐coupled nMOS LC‐tank oscillator with an inductor switch for frequency band selection. The LC tank can be a second‐or fourth‐order resonator depending upon the on/off state of a switch across a series‐tuned inductor. Measurement results show that at the supply voltage of 0.5 V, the free‐running frequency is from 8.68 (16.147) to 9.928 (17.89) GHz for the low‐ (high‐) frequency band. The divide‐by‐2 operational locking range is from 14.9 (30.64) to 22.2 (37.74) GHz for the low‐(high)‐frequency band. The divide‐by‐4 operational locking range is from 34.4 (64.6) to 40.35 (67) GHz for the low‐(high)‐frequency band. © 2010 Wiley Periodicals, Inc. Microwave Opt Technol Lett 52: 1421–1425, 2010; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.25217