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A wideband Gilbert cell mixer with an integrated Marchand balun using 0.5‐μm GaAs enhancement‐mode pHEMT technology
Author(s) -
Fu Jeffrey S.,
Kuo CheYu,
Lin ShaoWei,
Ke PoYu,
Chiu HsienChin
Publication year - 2010
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.25174
Subject(s) - balun , gilbert cell , high electron mobility transistor , wideband , electrical engineering , microwave , monolithic microwave integrated circuit , engineering , bandwidth (computing) , optoelectronics , electronic engineering , noise figure , materials science , telecommunications , amplifier , cmos , transistor , voltage , antenna (radio)
In this study, a fully integrated active Gilbert cell mixer with two Marchand baluns was proposed.The proposed circuit was designed at 12 GHz with bandwidth from 7.5 to 19 GHz and fabricated in a 0.5‐μm pHEMT process. In addition, the “current bleeding” technique was also provided in the Gilbert cell mixer to boost the conversion gain. The greatest conversion gain of 4.5 dB can be achieved in the designed circuit under LO input power of −2 dBm. Both RF‐IF and LO‐IF isolations were better than 30 dB. The third order intercept point input power, IIP 3 , achieved as high as 2 dBm. The mixer works from 7.5 to 19 GHz. © 2010 Wiley Periodicals, Inc. Microwave Opt Technol Lett 52: 1302–1306, 2010; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.25174