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The design of integrated 0.13‐μm CMOS receiver for ultra‐wideband systems
Author(s) -
Park Bonghyuk,
Lee Kwangchun,
Choi Sangsung,
Hong Songcheol
Publication year - 2010
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.25083
Subject(s) - noise figure , cmos , electrical engineering , cascode , engineering , electronic engineering , wideband , amplifier , low noise amplifier , broadband , chip , ultra wideband , microwave , telecommunications
A fully integrated 0.13‐μm CMOS receiver for ultra‐wideband systems is implemented. This receiver enables eight bands of operation covering 3.1–9.0 GHz. The system, based on the Multiband OFDM Alliance standard proposal and consisting of a direct‐conversion receiver chain and required noise figure, is discussed. The average conversion gain and input P1dB are 67.3 dB and −25.4 dBm, respectively. The shunt‐series feedback low‐noise amplifier provides a receiver front‐end noise figure of 7.1–9.5 dB over the entire band. The mixer, based on a folded‐cascode topology, also implements a four‐stage programmable gain amplifier. A fabricated die has been bonded and molded onto PCB for characterization. The receiver chip dissipates 48 mA from 1.2 V power supply. © 2010 Wiley Periodicals, Inc. Microwave Opt Technol Lett 52:841–845, 2010; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.25083