Premium
High‐performance W‐band MMIC mixer module using GaAs metamorphic HEMT
Author(s) -
An Dan,
Kim SungChan,
Rhee JinKoo
Publication year - 2010
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.25081
Subject(s) - monolithic microwave integrated circuit , high electron mobility transistor , coplanar waveguide , microwave , amplifier , electrical engineering , optoelectronics , materials science , w band , extremely high frequency , chip , frequency mixer , radio frequency , transistor , engineering , cmos , telecommunications , voltage
In this letter, we report on a high‐performance 94‐GHz millimeter‐wave monolithic integrated circuit (MMIC) mixer module using 0.1‐μm metamorphic high electron mobility transistors. A modified resistive mixer with a RF amplifier was proposed in this work for low conversion loss and high LO‐RF isolation. The MMIC mixer module was fabricated using a MMIC chip and CPW‐waveguide transitions. The fabricated mixer chip and module showed a low conversion loss of 6.3 and 9.5 dB, and LO‐RF isolations of 24.8 and 30.4 dB at 94 GHz, respectively. This results are superior to those of previously W‐band (75–110 GHz) MMIC mixers. © 2010 Wiley Periodicals, Inc. Microwave Opt Technol Lett 52:815–817, 2010; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.25081