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A band‐rejection type RF switch based on a dual‐mode microstrip ring resonator
Author(s) -
Lee Wu Seong,
Ryu Jae Jong,
Moon Yeon Kwan,
Lee Ju Gab,
Kim Ha Chul,
Choi Hyun Chul
Publication year - 2010
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.25080
Subject(s) - insertion loss , pin diode , resonator , microstrip , microwave , transmission line , optoelectronics , diode , materials science , electrical engineering , engineering , telecommunications
A band‐rejection type RF switch, which has very high off‐state isolation, low on‐state insertion loss, and adjustable bandwidth, is proposed using a dual‐mode ring resonator and two PIN diodes. To enable sharp band stop and dual‐mode transmission, the ring resonator is directly fed using nonorthogonal feeding. Two PIN diodes are mounted in shunt after a quarter‐wavelength transmission line from each feeding point, to turn the switch on and off and to reduce the size of the ring resonator. To estimate the practicable transmission characteristics of the proposed switch in relation to the angle of feeding and the wire‐bonded PIN diodes, a lossy transmission‐line equivalent circuit model is proposed, and even–odd mode analysis is carried out. The calculated frequency response shows good agreement with the measurement. The fabricated switch exhibits off‐state isolation of 43.08 dB, and on‐state insertion loss of 0.74 dB, within the range of 2.298–2.401 GHz. © 2010 Wiley Periodicals, Inc. Microwave Opt Technol Lett 52:947–950, 2010; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.25080