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An optimum design of high‐power amplifier with high efficiency using a realizable harmonic loading circuit
Author(s) -
Moon Junghwan,
Kim Jangheon,
Kim Jungjoon,
Kim Ildu,
Kim Bumman
Publication year - 2010
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.25032
Subject(s) - predistortion , amplifier , electrical engineering , dbc , power added efficiency , high electron mobility transistor , microwave , engineering , electronic engineering , power (physics) , rf power amplifier , harmonic , dbm , materials science , transistor , telecommunications , phase noise , cmos , physics , voltage , acoustics , quantum mechanics
An optimum design approach for a highly efficient power amplifier (PA) using a packaged high‐power device is described.Large fundamental load impedance assisted by a simple second harmonic manipulation is explored to improve the efficiency when maintaining the power density. For demonstration of the performance, the PA is implemented using GaN HEMT device at 2.655 GHz. In the experiment, the fabricated PA achieves power‐added efficiency (PAE) of 64.3% at the saturated output power of 49.2 dBm. For 802.16e mobile worldwide interoperability for microwave access signal, the PA delivers the PAE of ∼31% and ACLR of −49 dBc at the 10 dB backed‐off power of 40 dBm after the digital feedback predistortion linearization. © 2010 Wiley Periodicals, Inc. Microwave Opt Technol Lett 52:818–822, 2010; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.25032