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Study on RF MEMS switch with four parallel Ohm contacts for power handling enhancement
Author(s) -
Liu Zewen,
Hou Zhihao,
Li Zhijian
Publication year - 2010
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.25025
Subject(s) - ohm , microelectromechanical systems , electrical engineering , insertion loss , microwave , wideband , engineering , power (physics) , materials science , optoelectronics , electronic engineering , telecommunications , physics , quantum mechanics
In this article, we present a recent study on enhancement of the power handling capability in wideband Ohm contact type RF MEMS switch. The series Ohm contact switch presents a very good wideband RF performance in the DC to 30 GHz. To improve its power handling capability, switch unit consisted of four parallel single Ohm contact (FPOC) had been designed, fabricated, and measured. In this way, the power handling capability can be improved because of the reduction of contact resistance. The measurement results reveal that the FPOC switch insertion loss is 0.1 dB at 4 GHz and 0.3 dB at 10 GHz; its isolations are 25 dB at 4 GHz and −16 dB at 10 GHz. © 2010 Wiley Periodicals, Inc. Microwave Opt Technol Lett 52: 665–667, 2010; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.25025