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Impact of laterally asymmetric channel and gate stack architecture on device performance of surrounding gate MOSFETs
Author(s) -
Kaur Harsupreet,
Kabra Sneha,
Haldar Subhasis,
Gupta R. S.
Publication year - 2010
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.25022
Subject(s) - stack (abstract data type) , microwave , channel (broadcasting) , electronic engineering , engineering , electrical engineering , optoelectronics , computer science , materials science , telecommunications , programming language
A new device design laterally asymmetric channel gate stack (LACGAS) SGT is proposed, and its impact on device performance is examined. By using analytical modeling and numerical simulations, the novel features of this structure are studied, and it is demonstrated that LACGAS offers superior performance when compared with conventional devices. © 2010 Wiley Periodicals, Inc. Microwave Opt Technol Lett 52: 746–750, 2010; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.25022