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High‐performance integrated passive technology by advanced SI‐GaAs‐based fabrication for RF and microwave applications
Author(s) -
Wang Cong,
Lee JiHoon,
Kim NamYoung
Publication year - 2010
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.25018
Subject(s) - microwave , capacitor , resistor , inductor , fabrication , electrical engineering , optoelectronics , materials science , engineering , electronic engineering , voltage , telecommunications , medicine , alternative medicine , pathology
In this letter, an advanced SI‐GaAs‐based manufacturing process is presented for creating high quality, cost effective, and compact size integrated passive devices. Through this advanced process, accurate thin film resistors, high Q spiral inductors, and high yield/breakdown voltage metal‐insulator‐metal capacitors can be successfully realized. © 2010 Wiley Periodicals, Inc. Microwave Opt Technol Lett 52: 618–623, 2010; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.25018