Gate material engineered‐trapizoidal recessed channel MOSFET for high‐performance analog and RF applications | Zendy

Malik Priyanka | Zendy; Kumar Sona P. | Zendy; Chaujar Rishu | Zendy; Gupta Mridula | Zendy; Gupta R. S. | Zendy

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Gate material engineered‐trapizoidal recessed channel MOSFET for high‐performance analog and RF applications

Author(s) -

Malik Priyanka,

Kumar Sona P.,

Chaujar Rishu,

Gupta Mridula,

Gupta R. S.

Publication year - 2010

Publication title -

microwave and optical technology letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.304

H-Index - 76

eISSN - 1098-2760

pISSN - 0895-2477

DOI - 10.1002/mop.25012

Subject(s) - mosfet , microwave , cutoff frequency , electrical engineering , engineering , channel (broadcasting) , electronic engineering , radio frequency , and gate , optoelectronics , materials science , transistor , voltage , telecommunications

In this article, device characteristics of gate material engineered‐trapezoidal recessed channel (GME‐TRC) MOSFET are investigated using device simulators, ATLAS and DEVEDIT. Further, proposed device is examined for cutoff frequency ( F T ) and parasitic capacitances, and result offers the opportunity for realizing the reliability of GME‐TRC MOSFET for high‐speed logic and RF applications. © 2010 Wiley Periodicals, Inc. Microwave Opt Technol Lett 52: 694–698, 2010; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.25012

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