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Hot‐carrier reliability monitoring of DMG ISE SON MOSFET for improved analog performance
Author(s) -
Kaur Ravneet,
Chaujar Rishu,
Saxena Manoj,
Gupta R. S.
Publication year - 2010
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.25004
Subject(s) - linearity , reliability (semiconductor) , electrical engineering , mosfet , microwave , electronic engineering , materials science , engineering , telecommunications , physics , transistor , thermodynamics , power (physics) , voltage
The hot‐carrier reliability, analog, and linearity characteristics of DMG ISE SON MOSFET have been discussed.The device reduces electron temperature by 35.85% in comparison to a non‐dual material gate (DMG) architecture showing its self‐heating resistant nature. The analog performance and linearity metrics— g m /I DS , R out , V EA , and g m /g d and VIP 2 and VIP 3 —have been studied facilitating the selection of bias point for improved RF/analog performance. © 2010 Wiley Periodicals, Inc. Microwave Opt Technol Lett 52: 770–775, 2010; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.25004