Hot‐carrier reliability monitoring of DMG ISE SON MOSFET for improved analog performance | Zendy

Kaur Ravneet | Zendy; Chaujar Rishu | Zendy; Saxena Manoj | Zendy; Gupta R. S. | Zendy

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Hot‐carrier reliability monitoring of DMG ISE SON MOSFET for improved analog performance

Author(s) -

Kaur Ravneet,

Chaujar Rishu,

Saxena Manoj,

Gupta R. S.

Publication year - 2010

Publication title -

microwave and optical technology letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.304

H-Index - 76

eISSN - 1098-2760

pISSN - 0895-2477

DOI - 10.1002/mop.25004

Subject(s) - linearity , reliability (semiconductor) , electrical engineering , mosfet , microwave , electronic engineering , materials science , engineering , telecommunications , physics , transistor , thermodynamics , power (physics) , voltage

The hot‐carrier reliability, analog, and linearity characteristics of DMG ISE SON MOSFET have been discussed.The device reduces electron temperature by 35.85% in comparison to a non‐dual material gate (DMG) architecture showing its self‐heating resistant nature. The analog performance and linearity metrics— g m /I DS , R out , V EA , and g m /g d and VIP 2 and VIP 3 —have been studied facilitating the selection of bias point for improved RF/analog performance. © 2010 Wiley Periodicals, Inc. Microwave Opt Technol Lett 52: 770–775, 2010; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.25004

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