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Scaleable comprehensive low‐noise PHEMT model that predicts IP3 and noise
Author(s) -
Wei CeJun,
Zhu Yu,
Klimashov Oleksiy,
Li Binhui,
Cebi Haki,
Zhang Cindy,
Tkachenko Yevgeniy,
Bartle Dylan
Publication year - 2010
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.24995
Subject(s) - high electron mobility transistor , lookup table , noise (video) , microwave , electronic engineering , engineering , nonlinear system , electrical engineering , voltage , computer science , physics , transistor , telecommunications , artificial intelligence , image (mathematics) , quantum mechanics , programming language
Correlation of IP3 in a phemt with the third derivative of I ds wrt V gs , or Gm3 is addressed.A nonlinear large‐signal Phemt model was developed based on the fitting RF Gm characteristics as well as IV/CV. Systematic extraction approach is described. In extraction, RF Gm fitting minimizes the errors between modelled and measured Gm3. Scale‐ability in terms of DC, S‐parameters, and IP3 is demonstrated. For large‐size devices, other factors, such as RF‐Gds characteristics, are also important. Modelling of accurate noise response is realized with linear lookup table data based noise model and nonlinear voltage/current sampler. The over‐all model includes also physics‐based dynamic thermal effect and scaleable measurement‐based noise model that makes it the most comprehensive and most practical in industry. © 2010 Wiley Periodicals, Inc. Microwave Opt Technol Lett 52: 604–611, 2010; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.24995