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An on‐chip two‐state single‐turn spiral inductor for reconfigurable RF circuit designs
Author(s) -
Woods Wayne,
Ding Hanyi,
Wang Guoan,
Mina Essam
Publication year - 2010
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.24985
Subject(s) - inductor , microwave , inductance , turn (biochemistry) , spiral (railway) , electrical engineering , engineering , chip , electronic engineering , optoelectronics , materials science , physics , telecommunications , mechanical engineering , voltage , nuclear magnetic resonance
A two‐state single turn spiral inductor design is simulated in a 130 nm technology and another design is simulated and measured in a 45 nm technology. Measurements show an 80% inductance increase at 20 GHz in the 45 nm technology and a simulated 76% increase at 24 GHz in the 130 nm technology. © 2010 Wiley Periodicals, Inc. Microwave Opt Technol Lett 52: 673–677, 2010; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.24985

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