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A novel tunable dual‐band low noise amplifier for 868/915 MHz and 2.4 GHz Zigbee application by CMOS technology
Author(s) -
Xuan Kai,
Fung Tsang Kim,
Ching Lee Wah
Publication year - 2010
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.24964
Subject(s) - electrical engineering , cmos , microwave , amplifier , multi band device , low noise amplifier , noise (video) , engineering , voltage , electronic engineering , optoelectronics , physics , telecommunications , computer science , artificial intelligence , antenna (radio) , image (mathematics)
A dual‐band (868/915 MHz and 2.4 GHz) low noise amplifier for Zigbee applications is designed using 0.35‐μm CMOS technology.At 868/915 MHz and 2.4 GHz, the gains achieved are both 16 dB and the resulting noise figures are about 2.5 dB and 2.7 dB, respectively. The input and the output reflections are below −10 dB in both bands. The amplifier works at 2.5 V supply voltage with 12 mA current dissipation. © 2010 Wiley Periodicals, Inc. Microwave Opt Technol Lett 52: 507–510, 2010; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.24964