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Design and implementation of a high‐performance V‐band CMOS bandpass filter
Author(s) -
Chang JinFa,
Lin YoSheng
Publication year - 2010
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.24935
Subject(s) - insertion loss , return loss , band pass filter , cmos , capacitor , materials science , ground plane , electrical engineering , microstrip , inductor , filter (signal processing) , microwave , optoelectronics , electronic engineering , telecommunications , engineering , voltage , antenna (radio)
In this article, we demonstrate a low‐insertion‐loss V‐band (50–75 GHz) bandpass filter with two finite transmission zeros by standard 0.13 μm CMOS technology. The proposed filter architecture has the following feature: the low‐frequency transmission‐zero and the high‐frequency transmission‐zero can be tuned by the series‐feedback capacitor C s and the parallel‐feedback capacitor C p , respectively. Besides, low‐insertion‐loss is achieved by adopting thick microstrip‐line (MSL) with optimized ground‐plane pattern as the needed inductors to minimize the metal and substrate loss. This filter achieved insertion‐loss (1/S 21 ) lower than 3 dB over the frequency range of 52.2–76.7 GHz, input return loss (S 11 ) better than −10 dB over the frequency range of 50.2–80.6 GHz, and output return loss (S 22 ) better than −10 dB over the frequency range of 50.2–77.3 GHz. The minimum insertion‐loss was 2.18 dB at 63.5 GHz, an excellent result for a V‐band CMOS bandpass filter. The chip area was only 0.466 × 0.307 mm 2 , i.e., 0.143 mm 2 , excluding the test pads. © 2009 Wiley Periodicals, Inc. Microwave Opt Technol Lett 52: 309–316, 2010; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.24935