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Class F against tuned load configuration in Doherty power amplifiers
Author(s) -
Colantonio P.,
Giannini F.,
Giofrè R.,
Piazzon L.
Publication year - 2010
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.24918
Subject(s) - high electron mobility transistor , amplifier , microwave , doherty amplifier , electrical engineering , engineering , power (physics) , range (aeronautics) , class (philosophy) , electronic engineering , computer science , rf power amplifier , transistor , telecommunications , physics , voltage , cmos , quantum mechanics , aerospace engineering , artificial intelligence
The experimental results and comparison of two Doherty Power Amplifiers (DPAs) with the Main device designed respectively in a Tuned Load and a Class F configuration are presented. Both DPAs are designed by using GaN HEMT (1 mm of gate periphery) as active device to operate at 2.14 GHz, assuring an almost constant efficiency over the usual Output Back Off range of 6 dB. The experimental results demonstrate the benefit of the Class F solution in a DPA architecture. ©2009 Wiley Periodicals, Inc. Microwave Opt Technol Lett 52: 450–452, 2010; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.24918