A 2.6‐GHz fully integrated CMOS power amplifier using power‐combining transformer | Zendy

Chiou HwannKaeo | Zendy; Liao HsienYuan | Zendy; Chen ChienChung | Zendy; Wang ShihMing | Zendy; Chen ChengChung | Zendy

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A 2.6‐GHz fully integrated CMOS power amplifier using power‐combining transformer

Author(s) -

Chiou HwannKaeo,

Liao HsienYuan,

Chen ChienChung,

Wang ShihMing,

Chen ChengChung

Publication year - 2010

Publication title -

microwave and optical technology letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.304

H-Index - 76

eISSN - 1098-2760

pISSN - 0895-2477

DOI - 10.1002/mop.24910

Subject(s) - amplifier , electrical engineering , rf power amplifier , transformer , power added efficiency , power bandwidth , electronic engineering , engineering , cmos , voltage

A 2.6‐GHz power amplifier was implemented with a 0.18 μm RF CMOS process. The matching networks were fully integrated without any external components. To increase the output power, the power combining technique was adopted and realized by a 2:1 on‐chip transformer, which was designed to provide an optimum load for the power cell. The measured efficiency of this power combining transformer is about 75% at 2.6 GHz. The proposed power amplifier exhibits maximum output power of 26.7 dBm with power‐added efficiency of 18.1%. The power gain is 13.6 dB under 3.3 V supply voltage. Moreover, this letter shows good agreement between simulated and measured results. © 2009 Wiley Periodicals, Inc. Microwave Opt Technol Lett 52: 299–302, 2010; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.24910

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