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Medium power C‐band array amplifier featured ultra low residual phase noise
Author(s) -
Shtin Nicolas A.,
López Romero José Mauricio
Publication year - 2010
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.24896
Subject(s) - heterojunction bipolar transistor , dbc , amplifier , phase noise , electrical engineering , microwave , microstrip , optoelectronics , offset (computer science) , power (physics) , engineering , transistor , materials science , bipolar junction transistor , electronic engineering , physics , telecommunications , computer science , voltage , cmos , quantum mechanics , programming language
This article deals with a design and performance evaluation of a medium power C‐band array amplifier based on SiGe hetero‐junction bipolar transistors (HBT). The proposed power amplifier (PA) contains four identical HBT stages coupled by the means of compact power splitting/summing microstrip networks. The designed PA exhibits a very low phase noise level of −165 dBc/Hz at 1 kHz offset frequency, and it is distinguished by a high output power having P 1dB = +26 dBm and high power added efficiency approaching to 40%. © 2009 Wiley Periodicals, Inc. Microwave Opt Technol Lett 52: 292–295, 2010; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.24896