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A 17 GHZ colpitts VCO using reverse‐ and forward‐biased diode tuning in 0.18 μm CMOS
Author(s) -
Huang ChuangJen,
Hsue ChingWen,
Liu ChengChen,
Jang ShengLyang
Publication year - 2010
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.24818
Subject(s) - voltage controlled oscillator , colpitts oscillator , varicap , phase noise , electrical engineering , dbc , cmos , capacitor , microwave , voltage , materials science , optoelectronics , lc circuit , engineering , physics , vackář oscillator , capacitance , telecommunications , electrode , quantum mechanics
A 17 GHz complementary Colpitts voltage‐controlled oscillator (VCO) is designed and implemented in a 0.18 μm CMOS 1P6M process. The drain‐body diode of MOSFET is used as the varactor. The VCO consists of two single‐ended complementary Colpitts LC‐tank VCOs coupled by a pair of capacitors. At the supply voltage of 1.2 V, the output phase noise of the VCO is −108.54 dBc/Hz at 1 MHz offset frequency from the carrier frequency of 17.3 GHz, and the figure of merit is −189.51 dBc/Hz. Total VCO core power consumption is 2.4 mW. Tuning range is about 1 GHz, from 17.4 to 16.4 GHz, whereas the control voltage was tuned from 0 to 0.9 V. © 2009 Wiley Periodicals, Inc. Microwave Opt Technol Lett 52: 38–41, 2010; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.24818