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1.8‐dB insertion‐loss planar UWB CMOS bandpass filter with suspended inductors
Author(s) -
Lin YoSheng,
Lu LiChun,
Chang JinFa,
Huang PenLi,
Lu SheyShi
Publication year - 2009
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.24806
Subject(s) - insertion loss , return loss , cmos , inductor , materials science , band pass filter , ground plane , rfic , electrical engineering , optoelectronics , inductance , microstrip , electronic engineering , engineering , antenna (radio) , voltage
This article demonstrates a low insertion‐loss ultra‐wideband (UWB) CMOS bandpass filter (BP‐filter). Low insertion‐loss was achieved by adopting microstrip‐line (MSL) with optimized ground‐plane pattern as the needed small‐inductance inductors. In addition, to reduce the substrate loss of the large‐inductance spiral inductors, the underneath silicon was removed with the CMOS‐compatible backside inductively coupled plasma deep trench technology. This filter achieved insertion‐loss (1/ S 21 ) lower than 3 dB over the frequency range of 4.3–11.2 GHz, stop‐band rejection better than 25 dB over the frequency range of 0–2.3 and 17.4–36.8 GHz, and input return loss ( S 11 ) better than −10 dB over the frequency range of 3.1–15.8 GHz. The minimum insertion‐loss was 1.8 dB at 7 GHz. To our knowledge, this is the best result ever reported for a CMOS BP‐filter with operation frequencies higher than 3 GHz. © 2009 Wiley Periodicals, Inc. Microwave Opt Technol Lett 51: 2946–2948, 2009; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.24806