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The RF characteristics of micromachined coplanar waveguide in 0.13 μm CMOS technology by CMOS compatible ICP dry etching
Author(s) -
Wang Tao,
Lu SheyShi,
Lin YoSheng,
Juang YinZong,
Huang GuoWei
Publication year - 2009
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.24693
Subject(s) - coplanar waveguide , cmos , materials science , microwave , capacitance , electrical engineering , optoelectronics , etching (microfabrication) , characteristic impedance , capacitor , electrical impedance , chemistry , telecommunications , electrode , engineering , voltage , nanotechnology , layer (electronics)
A coplanar waveguide (CPW) was implemented in 0.13 μm CMOS technology and then postprocessed by CMOS compatible inductively‐coupled plasma etching, which removed the silicon underneath the coplanar strips. Transmission line parameters such as characteristic impedance Z O , attenuation constant α, substrate capacitance/conductance C/G, series inductance/resistance L/R, as a function of frequency were extracted. It is found that α, C, and G can be greatly improved after silicon removal. Specifically, a 0.45 dB/mm reduction (from 0.5 to 0.05 dB/mm) in α, a 1.6 mS/mm reduction (from 1.6 to ∼0 mS/mm) in G, and a 43.9% reduction (from 92.8 to 52.1 fF/mm) in C were achieved at 20 GHz. In addition, this work also investigates the dielectric loss α d and conductive loss α c of the CPW. © 2009 Wiley Periodicals, Inc. Microwave Opt Technol Lett 51: 2665–2668, 2009; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.24693