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Ku‐band substrate integrated waveguide transitions between layers
Author(s) -
Song Kaijun,
Fan Yong
Publication year - 2009
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.24685
Subject(s) - return loss , insertion loss , broadband , microwave , bandwidth (computing) , ku band , materials science , optoelectronics , waveguide , substrate (aquarium) , electronic circuit , electrical engineering , engineering , telecommunications , oceanography , geology , antenna (radio)
Two types of the substrate integrated waveguide (SIW) transitions between layers are presented in this letter. The SIW circuits have been used to achieve the transition from one layer to other layer. These two types of SIW transitions between layers operating in Ku‐band have been designed and fabricated. The measured 10‐dB return loss bandwidth of the transition between adjacent layers is about 7 GHz, and the measured 1‐dB insertion loss bandwidth is about 5 GHz; the measured 13‐dB return loss bandwidth of the unadjacent‐layers transition is demonstrated to be about 3.7 GHz, and the measured insertion losses are less than 2 dB from 11.2 GHz to 15 GHz. The simulated and measured results indicate that these two SIW transitions take the advantages of broadband, low insertion loss, and low profile. © 2009 Wiley Periodicals, Inc. Microwave Opt Technol Lett 51: 2585–2588, 2009; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.24685