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Hetero junction bipolar transistor‐based cascode amplifier with high‐frequency loss compensation network
Author(s) -
Wang Rong,
Gao Huai,
Chatchaikarn Aroonchat,
Li G. P.
Publication year - 2009
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.24611
Subject(s) - cascode , amplifier , heterojunction bipolar transistor , gain–bandwidth product , rlc circuit , common source , electrical engineering , electronic engineering , direct coupled amplifier , distributed amplifier , bipolar junction transistor , engineering , operational amplifier , transistor , capacitor , cmos , voltage
Performance analysis and design methodology of an HBT cascode amplifier with series RLC loss compensation network are reported in this article. The series RLC loss compensation network enhances the gain‐bandwidth product of the cascode amplifier. For comparison, cascode amplifiers with and without RLC loss compensation network are designed and fabricated on 2 μm InGaP/GaAs HBT technology. The measurement results show that the gain‐bandwidth product for the amplifier with loss compensation network is increased by a factor of 4, compared with the conventional amplifier. © 2009 Wiley Periodicals, Inc. Microwave Opt Technol Lett 51: 2410–2413, 2009; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.24611