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A CMOS fully integrated concurrent dual ultrawideband receiver frontend
Author(s) -
Chirala Mohan K.,
Nguyen Cam
Publication year - 2009
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.24586
Subject(s) - cmos , noise figure , electrical engineering , microwave , rf front end , chip , multi band device , physics , return loss , optoelectronics , front and back ends , materials science , engineering , radio frequency , telecommunications , amplifier , antenna (radio) , mechanical engineering
A new fully integrated receiver front‐end operating concurrently over the two bands of 3.1–4.8 and 6.3–7.9 GHz of the UWB spectrum (3.1–10.6 GHz) has been developed using a 0.18‐μm CMOS process. The receiver front‐end occupies a chip size of only 1.18 × 0.87 mm 2 and exhibits conversion gains from 12.5–16.5 dB and 14.5–16 dB and RF return losses from 10 to 11 dB and 10.5 to 12 dB over the 3.1–4.8 GHz and 6.3–7.9 GHz bands, respectively. The measured input 1‐dB compression points are −4.1 and −5.2 dBm at 4 and 6.5 GHz, respectively. The measured noise figure is from 7.5 to 12.5 dB across 3.1–7.9 GHz and less than 10 dB up to 7 GHz. The receiver front‐end consumes about 42 mA of current from a 1.8 V power supply. © 2009 Wiley Periodicals, Inc. Microwave Opt Technol Lett 51: 2003–2007, 2009; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.24586