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Design of CMOS T/R switch using high‐substrate isolation and RF floated body for 1.9‐GHz applications
Author(s) -
Lin YihHsia,
Chu ChunHsueh,
Chang DaChiang,
Gong Jeng,
Juang YingZong
Publication year - 2009
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.24577
Subject(s) - insertion loss , transistor , substrate (aquarium) , cmos , stacking , electrical engineering , rf switch , optoelectronics , materials science , microwave , radio frequency , engineering , telecommunications , physics , oceanography , nuclear magnetic resonance , voltage , geology
In this work, two single‐pole, double‐throw CMOS transmit/receive (T/R) switches are designed for 1.9‐GHz application. Of the two T/R switches, one adopts single‐transistor architecture; the other adopts transistor‐stacking architecture to get a higher power‐handling capability. Both of the T/R switches make use of optimized transistor sizes to inherently achieve low‐insertion loss. In addition, techniques including high‐substrate isolation between transistors and RF floated body are used to further enhance the input 1‐dB compression point (IP1dB) and reduce the insertion loss of the T/R switches. The T/R switch with stacking architecture achieves a measured IP1dB of 23.5 dBm and an insertion loss of 1 dB at 1.9 GHz. The T/R switch using single‐transistor architecture achieves a very low‐insertion loss of 0.57 dB and a measured IP1dB of 21.6 dBm at 1.9 GHz. © 2009 Wiley Periodicals, Inc. Microwave Opt Technol Lett 51: 2145–2149, 2009; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.24577