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A theoretical basis for Doherty amplifier bias control based on drain current characteristics
Author(s) -
Smith Karla J.I.,
Eccleston Kimberley W.,
Gough Peter T.,
Mann Stephen I.
Publication year - 2009
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.24565
Subject(s) - amplifier , electrical engineering , microwave , current (fluid) , engineering , electronic engineering , doherty amplifier , biasing , gate voltage , fet amplifier , voltage , current sense amplifier , power (physics) , rf power amplifier , physics , telecommunications , operational amplifier , transistor , cmos , quantum mechanics
This article introduces a gate bias control scheme for Doherty amplifiers, based on the measured gate‐voltage to drain‐current transfer characteristics of the FETs used, and their ideal fundamental output currents. An amplifier was realized at 800 MHz, and achieved over 35% drain efficiency from 8–14 dBm input power. © 2009 Wiley Periodicals, Inc. Microwave Opt Technol Lett 51: 2152–2156, 2009; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.24565