Premium
PA and LNA for millimeter‐wave WPAN using 90 nm CMOS process
Author(s) -
Kang MinSoo,
Kim BongSu,
Byun WooJin,
Kim KwangSeon,
Oh SeungHyeub,
Pinel Stephane,
Laskar Joy,
Song MyungSun
Publication year - 2009
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.24549
Subject(s) - noise figure , low noise amplifier , return loss , electrical engineering , cmos , amplifier , optoelectronics , microwave , materials science , extremely high frequency , physics , engineering , electronic engineering , telecommunications , antenna (radio)
We present the design and fabrication of power amplifier (PA) and low noise amplifier (LNA) in 60 GHz using 90 nm CMOS process. Both of them have three stages topology. We obtained small signal gain of 21 dB, P 1dB of 4 dBm, and input/output return losses of <−9 dB in PA. We also obtained small signal gain of 25 dB, noise figure of <7 dB, P 1dB of 1.5 dBm, input/out return losses of <−8 dB in LNA. The die sizes of PA and LNA are 1.1 × 0.8 mm 2 and 0.59 × 0.78 mm 2 , respectively. Both sizes contain the RF pads and bias pads. Especially, the size of LNA is reduced by using hairpin type matching structure. © 2009 Wiley Periodicals, Inc. Microwave Opt Technol Lett 51: 2029–2032, 2009; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.24549