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Extraction of CAD‐compatible statistical nonlinear models of GaAs HEMT MMICs
Author(s) -
Centurelli Francesco,
Di Martino Alberto,
Scotti Giuseppe,
Tommasino Pasquale,
Trifiletti Alessandro
Publication year - 2009
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.24543
Subject(s) - high electron mobility transistor , cad , microwave , monolithic microwave integrated circuit , engineering , statistical model , extraction (chemistry) , electronic engineering , nonlinear system , electrical engineering , computer science , engineering drawing , physics , telecommunications , transistor , chemistry , artificial intelligence , amplifier , cmos , chromatography , voltage , quantum mechanics
Abstract In this article, a statistical nonlinear model of GaAs HEMT MMICs based on standard CAD library models is presented. A previously developed extraction procedure is used to determine model parameters. Extraction and CAD implementation of the model in 1–50 GHz frequency range provide validation of both the statistical model and the extraction procedure. © 2009 Wiley Periodicals, Inc. Microwave Opt Technol Lett 51: 2163–2166, 2009; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.24543