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A low‐power SiGe BiCMOS series‐tuned divide‐by‐3 injection locked oscillators
Author(s) -
Jang ShengLyang,
Yang RenKai,
Liu ChengChen,
Hsue ChingWen
Publication year - 2009
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.24517
Subject(s) - electrical engineering , frequency divider , bicmos , voltage controlled oscillator , microwave , oscillation (cell signaling) , voltage , power (physics) , materials science , optoelectronics , series (stratigraphy) , silicon germanium , engineering , physics , silicon , telecommunications , transistor , cmos , chemistry , quantum mechanics , biology , paleontology , biochemistry
An LC‐tank oscillator‐based divide‐by‐3 injection locked frequency divider (ILFD) is proposed and the series‐tuned Armstrong ILFD were implemented in the 0.35 μm SiGe 3P3M BiCMOS technology. Measurement results show that when the supply voltage V dd is biased at 1.2 V, the free‐running oscillation frequency of the ILFD is tunable from 1.19 GHz to 1.0 GHz, and at the incident power of 0 dBm, the operation locking range is about 0.65 GHz, from the incident frequency 3.03–3.68 GHz. The core power consumption is 2.05 mW at V dd = 1.2 V. © 2009 Wiley Periodicals, Inc. Microwave Opt Technol Lett 51: 2239–2242, 2009; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.24517