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Low‐loss and high‐isolation active type cascode switch in 0.13‐μm CMOS for millimeter‐wave applications
Author(s) -
Lee Dong Ho
Publication year - 2009
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.24476
Subject(s) - cascode , insertion loss , nmos logic , cmos , electrical engineering , extremely high frequency , microwave , materials science , optoelectronics , engineering , electronic engineering , transistor , telecommunications , amplifier , voltage
This article presents two types of switches which are fabricated in 0.13‐μm standard CMOS process characterized up to 50 GHz. The first is the conventional series NMOS switch with an optimum gate width which is adjusted by measuring various sized devices. The second is a new active type cascode switch for millimeter‐wave phased array systems. The series NMOS switch produces 3 dB insertion loss and 7.5 dB isolation at 40 GHz. In contrast, the active type cascode switch has 7.5 dB better insertion loss (Gain) and 20 dB better isolation than the passive switch at 40 GHz. © 2009 Wiley Periodicals, Inc. Microwave Opt Technol Lett 51: 1856–1858, 2009; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.24476