Premium
A highly linear and efficient two‐stage GaN HEMT asymmetrical Doherty amplifier for WCDMA applications
Author(s) -
Lee YongSub,
Lee MunWoo,
Jeong YoonHa
Publication year - 2009
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.24387
Subject(s) - w cdma , high electron mobility transistor , predistortion , amplifier , linearity , microwave , doherty amplifier , electrical engineering , engineering , power (physics) , electronic engineering , stage (stratigraphy) , code division multiple access , rf power amplifier , telecommunications , transistor , physics , voltage , cmos , quantum mechanics , paleontology , biology
In this article, we propose a highly linear and efficient two‐stage GaN HEMT asymmetrical Doherty power amplifier (ADPA) for WCDMA applications. The first‐stage driving DPA not only improves the linearity as the predistortion circuit but also reduces the power consumption in the driving stage. The second‐stage main ADPA is optimized to achieve high efficiency at a 10‐dB back‐off power. © 2009 Wiley Periodicals, Inc. Microwave Opt Technol Lett 51: 1464–1467, 2009; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.24387