Concurrent dual‐band GaN power amplifier with compact microstrip matching network | Zendy

Bespalko D. T. | Zendy; Boumaiza S. | Zendy

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Concurrent dual‐band GaN power amplifier with compact microstrip matching network

Author(s) -

Bespalko D. T.,

Boumaiza S.

Publication year - 2009

Publication title -

microwave and optical technology letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.304

H-Index - 76

eISSN - 1098-2760

pISSN - 0895-2477

DOI - 10.1002/mop.24380

Subject(s) - multi band device , amplifier , microstrip , gallium nitride , microwave , materials science , electronic engineering , optoelectronics , transmission line , power (physics) , electrical engineering , monolithic microwave integrated circuit , matching (statistics) , insertion loss , engineering , telecommunications , physics , cmos , mathematics , nanotechnology , statistics , layer (electronics) , quantum mechanics , antenna (radio)

A concurrent dual‐band power amplifier (PA) using circuit transformations in the design of the dual‐band matching networks (MN) are outlined and a transmission line compression technique is used reduce the insertion loss of the MNs. A 10‐W Gallium Nitride based PA operating concurrently at 2.5 GHz and 3.5 GHz is compared with the performance of the equivalent single‐band PAs. © 2009 Wiley Periodicals, Inc. Microwave Opt Technol Lett 51: 1604–1607, 2009; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.24380

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