Premium
Concurrent dual‐band GaN power amplifier with compact microstrip matching network
Author(s) -
Bespalko D. T.,
Boumaiza S.
Publication year - 2009
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.24380
Subject(s) - multi band device , amplifier , microstrip , gallium nitride , microwave , materials science , electronic engineering , optoelectronics , transmission line , power (physics) , electrical engineering , monolithic microwave integrated circuit , matching (statistics) , insertion loss , engineering , telecommunications , physics , cmos , mathematics , nanotechnology , statistics , layer (electronics) , quantum mechanics , antenna (radio)
A concurrent dual‐band power amplifier (PA) using circuit transformations in the design of the dual‐band matching networks (MN) are outlined and a transmission line compression technique is used reduce the insertion loss of the MNs. A 10‐W Gallium Nitride based PA operating concurrently at 2.5 GHz and 3.5 GHz is compared with the performance of the equivalent single‐band PAs. © 2009 Wiley Periodicals, Inc. Microwave Opt Technol Lett 51: 1604–1607, 2009; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.24380