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0.7 V supply highly linear subthreshold low‐noise amplifier design for 2.4 GHz wireless sensor network applications
Author(s) -
Jhon HeeSauk,
Jung Hakchul,
Koo Minsuk,
Song Ickhyun,
Shin Hyungcheol
Publication year - 2009
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.24333
Subject(s) - subthreshold conduction , electrical engineering , cascode , low noise amplifier , cmos , electronic engineering , linearity , amplifier , noise figure , engineering , transistor , voltage
A low supply voltage and highly linear subthreshold CMOS low noise amplifier (LNA) for 2.4 GHz wireless sensor network applications is presented in this letter. We applied multiple gated transistor (MGTR) technique in subthreshold region to compensate the linearity degradation of low supply cascode topology. Moreover, the feedback capacitor, C f is used to enhance the power gain of amplifier without additional dc‐power dissipation. The proposed LNA has gain of 13.1 dB, noise figure (NF) of 3.8 dB, and −2.5 dBm IIP3 while dissipating only 0.49 mW from 0.7 V supply. The LNA has been designed using a 0.13 μm 1P8M standard CMOS process with top metal thickness of 3.3 μm . © 2009 Wiley Periodicals, Inc. Microwave Opt Technol Lett 51: 1316–1320, 2009; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.24333