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A “thru‐short” method for noise de‐embedding of MOSFETs
Author(s) -
Nan Lan,
Xiong YongZhong,
Mouthaan Koen,
Issaoun Ammar,
Shi Jinglin,
Ooi BanLeong
Publication year - 2009
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.24330
Subject(s) - electronic engineering , noise (video) , microwave , parasitic extraction , embedding , mosfet , flicker noise , engineering , electrical engineering , noise figure , computer science , cmos , transistor , telecommunications , voltage , amplifier , artificial intelligence , image (mathematics)
A “thru‐short” noise de‐embedding method for MOSFETs is presented. The capability of the “thru‐short” method has been validated through a comparison of measured and de‐embedded noise parameters using different methods. It is shown that the “thru‐short” method is reliable for on‐wafer de‐embedding of both S‐parameters and noise parameters up to 18 GHz. Noise contributions from the parasitics due to the contact pads and interconnections surrounding the MOSFET can be determined and removed accurately. © 2009 Wiley Periodicals, Inc. Microwave Opt Technol Lett 51: 1379–1382, 2009; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.24330