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Characterization and modeling of stacked MIM on‐chip capacitors with high‐capacitance density up to 20 GHz frequency region
Author(s) -
Moon Hyunwon,
Yu Sunil,
Song SeongSik,
Nam Ilku
Publication year - 2009
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.24305
Subject(s) - capacitor , capacitance , materials science , metal insulator metal , microwave , optoelectronics , electrical engineering , chip , electronic circuit , cmos , radio frequency , filter capacitor , electronic engineering , engineering , telecommunications , physics , voltage , electrode , quantum mechanics
In this article, double‐stacked and triple‐stacked metal‐insulator‐metal (MIM) capacitors fabricated in 0.18 μm CMOS process are reported. These provide high‐capacitance density of 2 fF/μm 2 and 3.2 fF/μm 2 and excellent dc and RF characteristics, respectively. The lumped circuit model of the stacked MIM capacitors is presented for high‐frequency applications up to 20 GHz. The stacked MIM capacitors offer a reduced chip area for a given capacitance value and are expected to be a viable choice for integration of RF/mixed‐mode circuits in a single chip. © 2009 Wiley Periodicals, Inc. Microwave Opt Technol Lett 51: 1235–1238, 2009; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.24305
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