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A differential VCO using the drain‐connected‐to‐body MOSFET
Author(s) -
Jang ShengLyang,
Chang ChiaWei,
Suchen MingHsiang,
Shen KuanChun
Publication year - 2009
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.24282
Subject(s) - voltage controlled oscillator , dbc , phase noise , electrical engineering , nmos logic , cmos , voltage , figure of merit , microwave , mosfet , transistor , engineering , materials science , optoelectronics , electronic engineering , physics , telecommunications
A new differential voltage‐controlled oscillator (VCO) is designed and implemented in a 0.13 μm CMOS 1P8M process. The designed circuit topology is an all nMOS LC‐tank VCO, and a drain‐connected‐to‐body MOSFET is used to enhance the VCO performance. At the supply voltage of 1.0 V, the output phase noise of the VCO is −109.66 dBc/Hz at 1 MHz offset frequency from the carrier frequency of 13.64 GHz, and the figure of merit is −187.15 dBc/Hz. Total power consumption is 3.3 mW. Tuning range is about 270 MHz, from 13.63 to 13.9 GHz, while the control voltage was tuned from 0 to 1.0 V.© 2009 Wiley Periodicals, Inc. Microwave Opt Technol Lett 51: 1174–1177, 2009; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.24282
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