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A 60‐GHz millimeter‐wave CMOS Marchand balun using 0.18‐μm CMOS technology
Author(s) -
Liu C.H.,
Hsu C.Y.,
Chuang H.R.,
Chen C.Y.
Publication year - 2009
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.24176
Subject(s) - balun , cmos , microwave , extremely high frequency , return loss , electrical engineering , wideband , impedance matching , electronic engineering , monolithic microwave integrated circuit , engineering , optoelectronics , materials science , telecommunications , electrical impedance , antenna (radio) , amplifier
A novel 60‐GHz wideband Marchand balun fabricated with a standard 0.18 μm six‐metal‐layer CMOS process for millimeter‐wave applications is presented. A technique for achieving good balance with the fourth metal layer microstrip conductor is used in the designed Marchand balun. The fabricated CMOS balun uses multilayer coupling with the top two layers. An output matching network is added to improve the output return loss. The measured amplitude imbalance was about ±1.5 dB from 25 to 65 GHz, over the 89% operating frequency band. © 2009 Wiley Periodicals, Inc. Microwave Opt Technol Lett 51: 766–770, 2009; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.24176