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A 20 W GaN HEMT harmonic impedance tuned class‐F power amplifier
Author(s) -
Kim JiYeon,
Chun SangHyun,
Yoo HoJoon,
Kim JongHeon,
Stapleton Shawn P.
Publication year - 2009
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.24164
Subject(s) - amplifier , impedance matching , electrical engineering , harmonic , electrical impedance , output impedance , high electron mobility transistor , power (physics) , buffer amplifier , engineering , electronic engineering , power added efficiency , materials science , rf power amplifier , voltage , transistor , physics , acoustics , cmos , quantum mechanics
A design methodology of harmonic output impedance optimization is proposed to achieve high efficient power amplifier. First of all, the effects of harmonic impedances of high frequency and high power device on drain voltage and current are analyzed. The optimum harmonic impedance region for high efficiency improvement are suggested through the analysis of efficiency variations due to the internal impedance and output matching circuit of high frequency and high power device. From the measured results, a GaN harmonic tuned class‐F amplifier has achieved 77% drain efficiency at the output power of 20 W. © 2009 Wiley Periodicals, Inc. Microwave Opt Technol Lett 51: 779–782, 2009; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.24164