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Impedance matching Wilkinson power dividers in 0.35 μm SiGe BiCMOS technology
Author(s) -
Kaymaksut Ercan,
Gürbüz Yasar,
Tekin Ibrahim
Publication year - 2009
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.24159
Subject(s) - wilkinson power divider , impedance matching , electrical engineering , splitter , amplifier , power dividers and directional couplers , bicmos , engineering , electrical impedance , electronic engineering , return loss , port (circuit theory) , electronic circuit , frequency divider , cmos , antenna (radio) , transistor , physics , voltage , optics
Abstract This article presents two miniature impedance matching Wilkinson power divider circuits in 0.35 μm SiGe BiCMOS technology for on‐chip power combining techniques for WLAN applications. The impedance matching Wilkinson power divider circuits are used as splitter/combiner for a 5.2 GHz fully integrated class‐A mode combined power amplifier. The splitter and combiner are designed to match the input and output impedances of the amplifier, respectively, so that no additional impedance matching is needed. Two fabricated impedance matching Wilkinson power divider circuits (splitter and combiner) have insertion losses better than 1.4 dB, return losses less than −13 dB and port‐to‐port isolation >12 dB at 5.2 GHz. © 2009 Wiley Periodicals, Inc. Microwave Opt Technol Lett 51: 681–685, 2009; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.24159