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A 40‐W balanced GaN HEMT class‐E power amplifier with 71% efficiency for WCDMA base station
Author(s) -
Lee YongSub,
Lee MunWoo,
Jeong YoonHa
Publication year - 2009
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.24150
Subject(s) - high electron mobility transistor , amplifier , w cdma , dbc , electrical engineering , microwave , broadband , power (physics) , power added efficiency , harmonic , optoelectronics , materials science , engineering , rf power amplifier , electronic engineering , physics , telecommunications , transistor , code division multiple access , phase noise , acoustics , cmos , voltage , quantum mechanics
A balanced class‐E power amplifier (PA) using a push‐pull GaN HEMT for high power and high efficiency is represented. For validation, a class‐E PA is designed and implemented using a push‐pull type GaN HEMT and tested for a single tone of 2.14 GHz. The measured results show that the balanced GaN HEMT class‐E PA shows a drain efficiency and power‐added efficiency (PAE) of 71% and 67.4% at an output power of 40 W with a gain of 13 dB through the significant harmonic suppression of below −51 dBc. © 2009 Wiley Periodicals, Inc. Microwave Opt Technol Lett 51: 842–845, 2009; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.24150