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A 2.4/5.7‐GHz dual‐band low‐power CMOS RF receiver with embedded band‐select switches
Author(s) -
Huang D.R.,
Lu C.L.,
Chuang H.R.
Publication year - 2009
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.24120
Subject(s) - cmos , electrical engineering , noise figure , multi band device , amplifier , radio frequency , low noise amplifier , microwave , engineering , broadband , electronic engineering , q band , intermediate frequency , telecommunications , antenna (radio)
This article presents a 2.4‐/5.7‐GHz dual‐band low‐power direct‐conversion CMOS RF receiver for the 802.11a/b/g WLAN applications. The RF receiver includes a low noise amplifier (LNA) with dual input stages and dual switches for each of 2.4/5.7‐GHz applications. This design can substitute the use of two LNAs in conventional structure and eliminate the use of the costly external band‐select switches. It also alleviates the difficulty of single matching for multiple frequency bands. The RF receiver also includes a Gilbert‐cell‐based broadband mixer which is designed to be both low power consumption and relatively high conversion gain. Fabricated in 0.18‐μm CMOS technology, the RF receiver exhibits a conversion gain of 25.8/20.6 dB, DSB noise figure of 4.4/5.6 dB, and input IP 3 of −18/−12.5 dBm at 2.4/5.7 GHz frequency band, respectively. The measured EVM for IEEE 802.11a/b/g is 1.2/1.6/1.1% at data rate of 11/54/54 Mbps. The power consumption under 1.8 V supply is 10.6 mW for the 2.4 GHz mode, and 17.2 mW for the 5.7 mode. © 2009 Wiley Periodicals, Inc. Microwave Opt Technol Lett 51: 593–597, 2009; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.24120