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A wideband GaN HEMT power amplifier based on the dual‐fed distributed structure for WiMAX applications
Author(s) -
Lee YongSub,
Lee MunWoo,
Jeong YoonHa
Publication year - 2009
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.24090
Subject(s) - wimax , wideband , high electron mobility transistor , amplifier , microwave , electrical engineering , bandwidth (computing) , distributed amplifier , electronic engineering , optoelectronics , engineering , voltage , materials science , transistor , telecommunications , rf power amplifier , wireless
Abstract In this article, we propose a wideband GaN HEMT power amplifier (PA) based on the dual‐fed distributed structure for 2.6 GHz WiMAX applications. For a continuous wave, the distributed PA shows the wideband performance compared with the conventional balanced PA. When the distributed PA is optimized by controlling the gate bias voltages, the wideband performance over 150 MHz is achieved for a WiMAX signal with a PAR of 9.47 dB and the signal bandwidth of 28 MHz. © 2008 Wiley Periodicals, Inc. Microwave Opt Technol Lett 51: 574–577, 2009; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.24090